On Preliminary Processing of Substrate to Decrease of Mismatch-Induced Stresses in a Heterostructure
DOI:
https://doi.org/10.22105/kmisj.v2i1.122Keywords:
Heterostructure, Mismatch-induced stresses, Radiation processing, Growth from gas phase, Radiation processing analytical approach for analyzing of mass and heat transfer.Abstract
In this paper we introduce an approach to decrease mismatch-induced stress in a heterostructure by using radiation processing of substrate before growth of epitaxial layers from gas phase. In the framework of the approach the mismatch-induced stresses in the heterostructure one can also find acceleration of recombination and diffusion of radiation defects from the damaged region during growth from gas phase at high temperature. We also consider an analytical approach for analyzing of mass and heat transfer. The approach gives a possibility to take into account simultaneously spatial and temporal variations of parameters of mass transfer. At the same time the approach gives a possibility to take into account nonlinearity of considered processes.
References
Stepanenko, I. P. (1980). Fundamentals of microelectronics. Sovetskoe Radio. (In Russian). https://library.ztu.edu.ua/doccard.php/11691
Gusev, V. G., & Gusev, Y. M. (1991). Electronics. Vysshaya Shkola. (In Russian). https://library.ztu.edu.ua/doccard.php/13150?
Lachin, V. I., & Savelov, N. S. (2001). Electronics. Phoenix. (In Russian). https://library.bmstu.ru/Catalog/Details/47903?
Vorob’ev, A. A., Korablev, V. V, & Karpov, S. Y. (2003). The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen. Semiconductors, 37(7), 838–842. https://doi.org/10.1134/1.1592861
Sorokin, L. M., Veselov, N. V., Shcheglov, M. P., Kalmykov, A. E. E., Sitnikova, A. A., Feoktistov, N. A., ... & Kukushkin, S. A. E. (2008). Electron-microscopic investigation of a SiC/Si (111) structure obtained by solid phase epitaxy. Technical physics letters, 34(11), 992-994. https://doi.org/10.1134/S1063785008110278
Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Sinitsyn, M. A., Nikolaev, A. E. E., Mikhailovsky, G. A., ... & Tsatsulnikov, A. F. (2009). Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN: Mg layers. Semiconductors, 43(7), 963-967. https://doi.org/10.1134/S1063782609070276
Li, Y., Antonuk, L. E., El-Mohri, Y., Zhao, Q., Du, H., Sawant, A., & Wang, Y. (2006). Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors. Journal of applied physics, 99(6), 064501. https://doi.org/10.1063/1.2179149
Chakraborty, A., Xing, H., Craven, M. D., Keller, S., Mates, T., Speck, J. S., ... & Mishra, U. K. (2004). Nonpolar a-plane p-type GaN and pn junction diodes. Journal of applied physics, 96(8), 4494-4499. https://doi.org/10.1063/1.1790065
Mitsuhara, M., Ogasawara, M., & Sugiura, H. (1998). Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium. Journal of crystal growth, 183(1–2), 38–42. https://doi.org/10.1016/S0022-0248(97)00336-9
Talalaev, R. A., Yakovlev, E. V, Karpov, S. Y., & Makarov, Y. N. (2001). On low temperature kinetic effects in metal-organic vapor phase epitaxy of III-V compounds. Journal of crystal growth, 230(1–2), 232–238. https://doi.org/10.1016/S0022-0248(01)01354-9
Zhang, Y. W., & Bower, A. F. (1999). Numerical simulations of island formation in a coherent strained epitaxial thin film system. Journal of the mechanics and physics of solids, 47(11), 2273–2297. https://doi.org/10.1016/S0022-5096(99)00026-5
Pankratov, E. L. (2022). On approach to optimize manufacturing of a four stages distributed amplifier to increase density of their elements under influence of miss-match induced stress and porosity of materials on technological process. https://doi.org/10.21203/rs.3.rs-1197911/v1
Fahey, P. M. (1985). Point defects and dopant diffusion in silicon. Stanford University. https://ui.adsabs.harvard.edu/abs/1985PhDT.........8F/abstract
Vinetskiy, V. L., & Kholodar, G. A. (1979). Radiative physics of semiconductors. Naukova Dumka. (In Russian). https://elib.spbstu.ru/dl/1618.pdf/download/1618.pdf
Pankratov, E. L. (2012). Decreasing of depth of p-n-junction in a semiconductor heterostructure by serial radiation processing and microwave annealing. Journal of computational and theoretical nanoscience, 9(1), 41–49. http://jre.cplire.ru/iso/sep11/11/abstract_e.html
Pankratov, E. L., & Bulaeva, E. A. (2013). Application of native inhomogeneities to increase compactness of vertical field-effect transistors. Journal of computational and theoretical nanoscience, 10(4), 888–893. https://doi.org/10.1166/JNAN.2012.1084
Pankratov, E. L., & Bulaeva, E. A. (2012). Decreasing of quantity of radiation defects in an implanted-junction rectifiers by using overlayers. International journal of micro-nano scale transport, 3(3), 119–130. https://scispace.com/pdf/decreasing-of-quantity-of-radiation-defects-in-an-implanted-5aax74xf9j.pdf
Pankratov, E. L., & Bulaeva, E. A. (2013). Doping of materials during manufacture p-n-junctions and bipolar transistors. Analytical approaches to model technological approaches and ways of optimization of distributions of dopants. Reviews in theoretical science, 1(1), 58–82. https://doi.org/10.1166/RITS.2013.1004
Carslaw, H. S., & Jaeger, J. C. (1959). Conduction of heat in solids . Oxford: Clarendon Press. https://doi.org/10.1016/0022-5096(59)90029-8
Korn, G. A., & Korn, T. M. (1968). Mathematical handbook for scientists and engineers: Definitions, theorems, and formulas for reference and review. McGraw-Hill Book Company. https://www.amazon.com/Mathematical-Scientists-Engineers-Definitions-Reference/dp/B0000CO5GE
Published
Issue
Section
Categories
License
Copyright (c) 2025 Karshi Multidisciplinary International Scientific Journal
This work is licensed under a Creative Commons Attribution 4.0 International License.
Issue 1